Series-
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds542pF @ 10V
Power - Max1.3W
Operating Temperature-
Mounting TypeSurface Mount
Package / Case4-XBGA, 4-FCBGA
Supplier Device Package4-FlipChip

RELATED PRODUCT

RF1S23N06LE
23A, 60V, 0.065OHM, N-CHANNEL,
TQM150NB04DCR RLG
AUTOMOTIVE 40V MOSFET, 15M, DUAL
UPA2791GR-E1-AT
POWER, 5A, 30V, N-CHANNEL MOSFET
FDS8934A
P-CHANNEL POWER MOSFET
2SJ664-E-SY
P-CHANNEL SILICON MOSFET
FW813-TL-H
POWER FIELD-EFFECT TRANSISTOR
RF1S17N06L
DISCRETE ,LOGIC LEVEL GATE (5V),
2SJ664-E
P-CHANNEL SILICON MOSFET
FDMS9408
N-CHANNEL MOSFET