SeriesHEXFET®
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta), 9.7A (Ta)
Rds On (Max) @ Id, Vgs22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs6.9nC, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds580pF, 900pF @ 15V
Power - Max1.4W (Ta), 2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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