Series-
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds268pF @ 10V
Power - Max510mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020-6

RELATED PRODUCT

PMGD130UN,115
PMGD130UN - SMALL SIGNAL, SC-88
PMGD175XN,115
PMGD175XN - SMALL SIGNAL, SC-88
NTJD2152PT1G
SMALL SIGNAL P-CHANNEL MOSFET
MCH6631-TL-E-SY
N CHANNEL AND P CHANNEL SILICON
MCH6631-TL-E
N CHANNEL AND P CHANNEL SILICON
2N7002KDWA-TP
N-CHANNEL MOSFET EFFECT,SOT-363