SeriesCoolSiC™+
PackageTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C200A (Tj)
Rds On (Max) @ Id, Vgs5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds14700pF @ 800V
Power - Max20mW (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY2BM-2

RELATED PRODUCT

DMN53D0LDW-13
MOSFET 2N-CH 50V 0.36A SOT363
NX3020NAKS,115
MOSFET 2N-CH 30V 180MA 6TSSOP
2N7002PV,115
MOSFET 2N-CH 60V 0.35A SOT-666
NX3008NBKS,115
MOSFET 2N-CH 30V 0.35A 6TSSOP
NX3008PBKS,115
MOSFET 2P-CH 30V 0.2A 6TSSOP
BSS84AKS,115
MOSFET 2P-CH 50V 0.16A 6TSSOP
2N7002PS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP