Series | - |
Package | Bulk |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Frequency - Transition | 1.09GHz |
Noise Figure (dB Typ @ f) | - |
Gain | 6dB |
Power - Max | 2300W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 5V |
Current - Collector (Ic) (Max) | 46A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | M112 |
Supplier Device Package | M112 |
Rm 1099,Block A,BaoHua Building,
HuaQiang North Rd,Futian Dist, SZ, China.
© Copyright LinkElectronics, All Rights Reserved