Series | - |
Package | Bag |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 19V |
Frequency - Transition | 1.1GHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 5mA, 10V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | 125°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 3-SIP |
Supplier Device Package | 3-SIP |
Rm 1099,Block A,BaoHua Building,
HuaQiang North Rd,Futian Dist, SZ, China.
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